The 10th International Symposium
on Biomedical Engineering
(ISBE2025)
International Workshop
on Nanodevice Technologies 2025
(IWNT2025)
October 30th & 31th, 2025
Higashihiroshima, Japan
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The International Symposium on Biomedical Engineering (ISBE) convenes the world’s foremost experts in biology, medicine, and engineering, fostering interdisciplinary dialogue and catalyzing breakthroughs in biomedical technology. By promoting high-impact exchanges and forging strategic collaborations, ISBE advances fundamental research and real-world applications. In 2025, ISBE will partner with the International Workshop on Nanodevice Technologies (IWNT) to broaden its scope and integrate the latest innovations in nanoscale device science. Held on October 30–31, 2025, in Higashihiroshima,Hiroshima, Japan, this combined event will offer attendees a unified vantage point on pioneering developments at the nexus of biomedical engineering and nanotechnology.
ISBE 2025 is organized by the Research Center for Biomedical Engineering (RCBE), which consists of the Laboratory for Biomaterials and Bioengineering (LBB) at Institute of Science Tokyo, the Laboratory for Future Interdisciplinary Research of Science and Technology (FIRST) at Institute of Science Tokyo, the Research Institute for Semiconductor Engineering (RISE) at Hiroshima University and the Research Institute of Electronics (RIE) at Shizuoka University. This symposium is supported by Ministry of Education, Culture, Sports, Science and Technology, Japan (MEXT), with sponsorship from Micron Memory Japan.
IWNT 2025 is organized by RISE in partnership with the Setouchi Semiconductor Consortium, with sponsorship from Micron Memory Japan and the Advanced Research Infrastructure for Materials and Nanotechnology in Japan (ARIM Japan).
Abstract Submission Deadline: | September 12(Fri), 2025 |
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Registration Deadline: | October 3(Fri), 2025 |
Symposium/Workshop: | October 30(Thu) / 31(Fri), 2025 |
Chair: Shin-ichiro Kuroki, Hiroshima University
09:30 - 09:35 | Opening Remarks Seiichi Miyazaki, Vice-president, Hiroshima University |
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09:35 - 09:40 | Opening Address Akinobu Teramoto, Director, Research Institute for Semiconductor Engineering (RISE), Hiroshima University |
Chair: Shin-ichiro Kuroki , Hiroshima University
09:40 - 10:30 | (Keynote) Muhammad Alam, Purdue University, USA “Rethinking the Reliability Physics of Advanced Packaging” |
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10:30 - 11:05 | Takashi Hayakawa, Tokyo Electron Ltd., Japan “Challenge & Opportunity for Further Scaling Scenario” |
11:05 - 11:40 | Takayuki Iwaki, Micron Memory Japan, Japan “DRAM Scaling Challenges and Innovations for AI Era” |
Chair: Suguru Kameda, Hiroshima University
14:00 - 14:40 | (Keynote) Kurtis Cantley, Boise State University, USA “Semiconductor Materials and Devices for Spiking Neuromorphic Architectures” |
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14:40 - 15:15 | Tetsuo Sasaki, Shizuoka University, Japan “Terahertz Laser Spectroscopy and its Applications Mainly for Pharmaceutical Industry” |
15:15 - 15:50 | Koichi Kato, Hiroshima University, Japan “Micropatterned chips for stem cell characterization” |
Chair: Hideki Gotoh, Hiroshima University
16:20 - 16:55 |
Yasuhiko Ishikawa ,Toyohashi University of Technology Junichi Fujikata , Tokushima University, Japan “Ge-based photodetectors and electro-absorption modulators in Si Photonics” |
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16:55 - 17:30 | Kenya Shimada, Hiroshima University, Japan “Surface/interface studies using synchrotron radiation” |
17:30 - 17:40 | Closing |
Chair: Anri Nakajima , Hiroshima University
7-19 Saijo Sakae-cho, Higashihiroshima City, Hiroshima Prefecture
TEL: 082-426-5900(9:00AM~7:00PM)
WEB site: https://kurara-hall.jp/ (Japanese only)
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If you have any questions about the symposium or workshop, contact the organizers at: info@isbe-iwnt2025.jp